Datasheet 5N3011P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	5N3011P	H5N3011P H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode	Renesas

5N30 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
5N3011P	H5N3011P H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak curre	Renesas
5N30	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 5N30 ·DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=2	Inchange Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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