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Datasheet 55N20E Equivalent ( PDF )

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1 55N20E   MTY55N20E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY55N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy
Motorola Semiconductors
Motorola Semiconductors		 datasheet 55N20E pdf

55N Datasheet ( Hoja de datos ) - resultados coincidentes

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55N03LTA

Logic Level FET

PHP/PHB/PHD55N03LTA TrenchMOS™ Logic Level FET Rev. 04 — 4 September 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA
Philips
Philips		 datasheet pdf - Philips
55N03LT

PHB55N03LT

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible PHP55N03LT, PHB55N
 NXP Semiconductors
NXP Semiconductors		 datasheet pdf - NXP Semiconductors
55NF06

N-CHANNEL POWER MOSFET TRANSISTOR

55NF06 ® Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ DESCRIPTION 12 3 TO-251/IPAK ThinkiSemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. L
 THINKISEMI
THINKISEMI		 datasheet pdf - THINKISEMI


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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