Datasheet 53NA50 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	53NA50	STE53NA50 STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST E53NA50 s s s s V DSS 500 V R DS(on) < 0.085 Ω ID 53 A s s s s s TYPICAL RDS(on) = 0.075 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY T	ST Microelectronics

53N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
53NA50	STE53NA50 STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST E53NA50 s s s s V DSS 500 V R DS(on) < 0.085 Ω ID 53 A s s s s s TYPICAL RDS(on) = 0.075 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POW	ST Microelectronics
53N06	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 53N06 ·DESCRIPTION ·Drain Current ID= 53A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=	Inchange Semiconductor
53NC50	STE53NC50 N-CHANNEL 500V - 0.070Ω - 53A ISOTOP PowerMesh™II MOSFET TYPE STE53NC50 n n n n n STE53NC50 VDSS 500V RDS(on) < 0.08Ω ID 53 A TYPICAL RDS(on) = 0.07 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MI	STMicroelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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