|
|
Datasheet 4N90 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 4N90 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N90
·DESCRIPTION ·Drain Current ID= 3.6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARA |
 Inchange Semiconductor |
 |
| 2 | 4N90 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N90
4 Amps, 900 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minim |
 Unisonic Technologies |
|
| 1 | 4N90C | FQP4N90C FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
FQP4N90C / FQPF4N90C
N-Channel QFET® MOSFET
900 V, 4.0 A, 4.2 Ω
December 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOS |
 Fairchild Semiconductor |
|
| Esta página es del resultado de búsqueda del 4N90. Si pulsa el resultado de búsqueda de 4N90 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |