Datasheet 4N60S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	4N60S	N-Channel MOSFET 4A, 600V, N沟道功率场效应晶体管【产品参数规格书】工业型号 FQU4N60 FQD4N60 公司型号通俗命名 H H4N60I H4N60S 4N60 HAOHAI 封装标识 N-Channel Power Field Effect Transistoe　英文与中文简体版本无铅产品提供SGS环保认证, 符合欧美RoHS环保	HAOHAI

4N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
4NF20L	STN4NF20L STN4NF20L N-channel 200 V, 1.1 Ω , 1 A SOT-223 low gate charge STripFET™ II Power MOSFET Features Order code STN4NF20L ■ ■ ■ VDSS 200 V RDS(on) max. < 1.5 Ω ID 1A 2 100% avalanche tested Low gate charge Exceptional dv/dt capability 1 SOT-223 2 3 Application Swi	STMicroelectronics
4N35	Optocoupler 4N35, 4N36, 4N37 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection A1 C2 NC 3 6B 5C 4E 21842 i179004-5 DESCRIPTION Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS • Underwriters lab	Vishay Telefunken
4N60B	600V N-Channel MOSFET SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize	Fairchild Semiconductor

Esta página es del resultado de búsqueda del 4N60S. Si pulsa el resultado de búsqueda de 4N60S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap