No | Part number | Description ( Function ) | Manufacturers | |
1 | 4AK27 | Silicon N Channel MOS FET High Speed Power Switching 4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st. Edition January 1999 Features • Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK27 Absolute Maxim |
Hitachi Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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