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Datasheet 4AK19 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 4AK19 | Silicon N Channel MOS FET High Speed Power Switching 4AK19
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-727 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices. • High density mounting
Outline
SP |
Hitachi Semiconductor |
4A Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
4AK19 | Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
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4AC14 | Silicon NPN Triple Diffused |
Hitachi Semiconductor |
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4AF2 | (4AF Series) Pressfit Rectifier Diodes |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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