No | Part number | Description ( Function ) | Manufacturers | |
1 | 45N03LTG | P45N03LTG NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N03LTG TO-220 Lead Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20m ID 45A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current |
Niko |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 45N03LTG |
Part No | Description ( Function) | Manufacturers | |
45N03LT | PHP45N03LT Philips Semiconductors TrenchMOS™ transistor Logic level FET Product specification PHP45N03LT FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal res |
Philips Semiconductors |
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FQD45N03L | N-Channel Logic Level PWM Optimized Power MOSFET FQD45N03L March 2004 FQD45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves t |
Fairchild Semiconductor |
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GJ45N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2006/08/16 REVISED DATE : GJ45N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 9m 45A The GJ45N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resis |
GTM |
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H45N03E | N-Channel Enhancement-Mode MOSFET HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200518 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H45N03E N-Channel Enhancement-Mode MOSFET (25V, 45A) H45N03E Pin Assignment Tab Features • RDS(on)=15mΩ@VGS=10V, ID=25A • RDS(on)=20mΩ@VGS=4.5V, |
Hi-Sincerity Mocroelectronics |
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P45N03LTFG | N-Channel Enhancement Mode MOSFET P45N03LTFG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ @VGS = 10V ID 36A TO-220F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage V |
UNIKC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |