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Datasheet 3VD186600YL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3VD186600YL | HIGH VOLTAGE MOSFET CHIPS 3VD186600YL
3VD186600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltageblocking capability. ¾ Avalanche Energy |  Silan Microelectronics | mosfet |
3VD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3VD156600YL | HIGH VOLTAGE MOSFET CHIPS 3VD156600YL
3VD156600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability. ¾ Avalanche Energy Silan Microelectronics mosfet | | |
| 2 | 3VD182600YL | HIGH VOLTAGE MOSFET CHIPS 3VD182600YL
3VD182600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Ø Ø Ø Ø Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanc Silan Microelectronics mosfet | | |
| 3 | 3VD186600YL | HIGH VOLTAGE MOSFET CHIPS 3VD186600YL
3VD186600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltageblocking capability. ¾ Avalanche Energy Silan Microelectronics mosfet | | |
| 4 | 3VD186700YL | HIGH VOLTAGE MOSFET CHIPS 3VD186700YL
3VD186700YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanc Silan Microelectronics mosfet | | |
| 5 | 3VD499650YL | HIGH VOLTAGE MOSFET CHIPS 3VD499650YL
3VD499650YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability; Avalanc Silan Microelectronics mosfet | |
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