| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 3SK298 | Silicon N-Channel Dual Gate MOS FET 3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to |
 Hitachi Semiconductor |
|
0 1 2 3 4 5 6 7 8 9 |
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