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3SK135A PDF Datasheet

The 3SK135A is Rf Amp. For Uhf Tv Tuner N-channel SilICon Dual-gate Mos. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 3SK135A
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP. PACKAGE DIMENSIONS in millimeters 0.4+0.1 –0.05 2 2.8+0.2 –0.3 1.5+0.2 –0.1 –0.06

NEC
NEC
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Sanyo Semicon Device
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2SK3135   Silicon N Channel MOS FET High Speed Power Switching

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2SK3135L   Silicon N Channel MOS FET High Speed Power Switching

2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2

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2SK3135S   Silicon N Channel MOS FET High Speed Power Switching

2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2

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