No | Part number | Description ( Function ) | Manufacturers | |
1 | 3SK135A | RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP. PACKAGE DIMENSIONS in millimeters 0.4+0.1 –0.05 2 2.8+0.2 –0.3 1.5+0.2 –0.1 –0.06 |
NEC |
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2SK3135 | Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 |
Hitachi Semiconductor |
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2SK3135L | Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 |
Hitachi Semiconductor |
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2SK3135S | Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 |
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