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3N60 PDF Datasheet

The 3N60 is N-channel Power MOSFET, N-channel MOSFET Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
8 3N60
N-Channel Power MOSFET / Transistor

SEMICONDUCTOR 3N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (3A, 600Volts) DESCRIPTION The Nell 3N60 is a three-terminal silicon device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switche

nELL
nELL
pdf
7 3N60
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 3N60 ·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA

Inchange Semiconductor
Inchange Semiconductor
pdf
6 3N60
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 3N60 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high

Unisonic Technologies
Unisonic Technologies
pdf
5 3N60A
600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 3N60A 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching a

Unisonic Technologies
Unisonic Technologies
pdf
4 3N60K
600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 3N60K 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

Unisonic Technologies
Unisonic Technologies
pdf
3 3N60K-MK
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 3N60K-MK Preliminary 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60K-MK is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed

Unisonic Technologies
Unisonic Technologies
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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