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Datasheet 3N190 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3N190 | Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N190 / 3N191
FEATURES
CORPORATION
• Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Vo |  Calogic LLC | amplifier |
| 2 | 3N190 | P-CHANNEL DUAL MOSFET ENHANCEMENT MODE 3N190 3N191
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation |  Linear Integrated Systems | mosfet |
| 3 | 3N190 | Amplifier 3N190 P-CHANNEL MOSFET
The 3N190 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF The hermetically sealed TO-78 package is well suited ABS |  Micross | amplifier |
| 4 | 3N190 | Dual P-Channel Enhancement Mode MOSFET Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
|  Intersil | mosfet |
| 5 | 3N190 | Trans MOSFET P-CH 30V 0.05A 7-Pin TO-78 |  New Jersey Semiconductor | mosfet |
3N1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3N100E | MTB3N100E MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N100E/D
Designer's
TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package whi  Motorola Semiconductors data | | |
| 2 | 3N121 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 3 | 3N123 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 4 | 3N128 | MOSFET AMPLIFIER MAXIMUM RATINGS
Rating Drain-Source Voltage
Drain-Gate Voltage Gate-Source Voltage
Drain Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol vDs vDg vgs
id
Pd
Tj, Tstg
Value + 20 + 20 ±10 50 330 2.2
-65 to +175
Unit
Vdc Vdc Vdc Motorola Semiconductors amplifier | | |
| 5 | 3N128 | Silicon MOS Transistor General Electric Solid State transistor | | |
| 6 | 3N128 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | | |
| 7 | 3N129 | Trans MOSFET N-CH 20V 0.05A Rail New Jersey Semiconductor mosfet | |
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