| No | Part number | Description ( Function ) | Manufacturers | |
| 5 | 3N165 | Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N165 / 3N166 FEATURES CORPORATION • Very High Impedance • High Gate Breakdown • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
 Calogic LLC |
|
| 4 | 3N165 | MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 3N166 Transient G-S Voltage (NOTE 3) Gate-Gate Voltage Drain Current (NOTE 2) Storage Temperature Operatin |
 Linear Integrated Systems |
|
| 3 | 3N165 | Amplifier 3N165 P-CHANNEL MOSFET The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N165 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temperature ‐65°C to +200°C for high reliability and harsh environment app |
 Micross |
|
| 2 | 3N165 | Trans MOSFET P-CH 40V 0.05A |
 New Jersey Semiconductor |
|
| 1 | 3N165-6 | MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 3N166 Transient G-S Voltage (NOTE 3) Gate-Gate Voltage Drain Current (NOTE 2) Storage Temperature Operatin |
Linear Integrated Systems |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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