No | Part number | Description ( Function ) | Manufacturers | |
15 | 3EZ18 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) DATA SHEET 3EZ11~3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V • Plastic package has Underwriters Laboratory Flammability Classification 94V-O .300(7.6) .230(5.8) 1.0(25.4) MIN |
Pan Jit International Inc. |
|
14 | 3EZ18 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 3EZ11 THRU 3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Typical ID less than 1 A above 11V High temperature soldering : DO-15 260 /10 seconds at terminals Plastic package has Underwriters |
TRSYS |
|
13 | 3EZ18 | Silicon-Power-Z-Diodes (non-planar technology) 3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions |
Diotec Semiconductor |
|
12 | 3EZ180 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) DATA SHEET 3EZ11~3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V • Plastic package has Underwriters Laboratory Flammability Classification 94V-O .300(7.6) .230(5.8) 1.0(25.4) MIN |
Pan Jit International Inc. |
|
11 | 3EZ180 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 3EZ11 THRU 3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Typical ID less than 1 A above 11V High temperature soldering : DO-15 260 /10 seconds at terminals Plastic package has Underwriters |
TRSYS |
|
10 | 3EZ180 | Silicon-Power-Z-Diodes (non-planar technology) 3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions |
Diotec Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |