No | Part number | Description ( Function ) | Manufacturers | |
1 | 3DG9013 | NPN EPITAXIAL SILICON TRANSISTOR NPN 硅外延晶体管 NPN EPITAXIAL SILICON TRANSISTOR R 3DG9013 主要参数 MAIN CHARACTERISTICS 封装 Package IC VCEO PC 500mA 20V 625mW 用途 APPLICATIONS z 高频开关电源 z High frequency switching power supply z 高频功率变换 z High frequency power transform z 一般功率放大电路 z Commonly power amplifier circuit 产品特性 z硅外延 z� |
JILIN SINO |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 3DG9013 |
Part No | Description ( Function) | Manufacturers | |
3DG9014 | NPN EPITAXIAL SILICON TRANSISTOR NPN 硅外延晶体管 NPN EPITAXIAL SILICON TRANSISTOR R 3DG9014 主要参数 MAIN CHARACTERISTICS 封装 Package IC VCEO PC 100mA 45V 450mW 用途 z 高频开关电源 APPLICATIONS z High frequency switching power supply z 高频功率变换 z High frequency power tran |
JILIN SINO |
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3DG9014 | SILICON NPN TRANSISTOR 9014(3DG9014) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低电平、低噪声的前置放大器。 Purpose: Low frequency, low noise amplifier. 特点:PC 大,hFE 高而且特性好,与 9015(3CG9015)互补。 Features: High PC and hFE excellent hFE linearit |
ETC |
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3DG9014M | SILICON NPN TRANSISTOR 9014M(3DG9014M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低电平、 低噪声的前置放大器。 /Purpose: L ow fr equency, lownoise p re-amplifier. 特点:PC 大,hFE 高且特性好,与 9015M(3CG9015M)互补。/Features: High P C and h FE, excellent h |
FOSHAN BLUE ROCKET |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |