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Datasheet 3DG3001A1-H Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3DG3001A1-H | Silicon NPN Transistor 产品概述
3DG3001 A1-H 是硅 NPN 型功率开关晶体管，该 产品采用平面工艺，分压环 终端结构和少子寿命控制 技术，提高了产品的击穿电 压、开关速度和可靠性。
硅三重扩散 NPN 双极型晶体管
3DG3001 A1-H
○R
产品特点
● 开关损耗� |  Huajing Microelectronics | transistor |
3DG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3DG100 | NPN Silicon High Frequency Low Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG100, 3DG102
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use  Shaanxi Qunli transistor | | |
| 2 | 3DG1008 | SILICON NPN TRANSISTOR CSD18504Q5A
www.ti.com SLPS366 – JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18504Q5A
1
FEATURES
Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY  LZG transistor | | |
| 3 | 3DG101 | Silicon NPN high frequency low power transistor 3DG101 型 NPN 硅高频小功率晶体管
参数符号
测试条件
PCM 极 限 ICM 值 Tjm
Tstg V(BR)CBO V(BR)CEO V(BR)EBO 直 ICBO 流 ICEO 参 IEBO 数 VBEsat VCEsat
hFE
交 流 fT
参 数
ICB=0.1mA ICE=0.1mA IEB=0.1mA VCB=10V VCE=10V VEB=1.5V IC=10mA
IB=1mA VCE=10V
IC=0.5mA VCE=10V
IC=3mA
f  ETC transistor | | |
| 4 | 3DG101 | NPN Silicon High Frequency Low Power Transistor 3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificati  Qunli Electric transistor | | |
| 5 | 3DG102 | NPN Silicon High Frequency Low Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG100, 3DG102
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use Shaanxi Qunli transistor | | |
| 6 | 3DG110 | NPN Silicon High Frequency Low Power Transistor 3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificati Qunli Electric transistor | | |
| 7 | 3DG111 | NPN Silicon High Frequency Low Power Transistor 3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificati Qunli Electric transistor | |
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