Datasheet 3DG1957 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	3DG1957	SILICON NPN TRANSISTOR 2SC1957(3DG1957) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于大信号输出放大。 Purpose: Large signal output amplifier. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号数值单位 Symbol Rating Unit VCBO 75 V VCEO 40 V VEBO 4.0 V IC 1.0 A PC(Ta=25	BLUE ROCKET ELECTRONICS

3DG1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
3DG1008	SILICON NPN TRANSISTOR CSD18504Q5A www.ti.com SLPS366 – JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18504Q5A 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Pac	LZG
3DG130	NPN Silicon High Frequency Middle Power Transistor Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG130 NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy inst	Shaanxi Qunli
3DG122	NPN Silicon High Frequency Middle Power Transistor www.DataSheet4U.net Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG122 NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, lig	Shaanxi Qunli Electric

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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