No | Part number | Description ( Function ) | Manufacturers | |
1 | 3DG1417 | SILICON NPN TRANSISTOR 2SC1417(3DG1417) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频放大。/Purpose: High frequency amplifier. 限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 20 15 3.0 30 100 150 -55~150 V V V mA mW ℃ ℃ 电性能参数/Electrical characteristics(Ta=25℃) 数值 参数符� |
IZG |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 3DG1417 |
Part No | Description ( Function) | Manufacturers | |
3DG140 | NPN Silicon High FrequencyLow Power Transistor Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG140 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy install |
Qunli Electric |
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HYB314171BJ-50 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJ-50/-60/-70 HYB 314171BJL-50/-60/-70 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle tim |
Siemens Semiconductor Group |
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HYB314171BJ-50- | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJ-50/-60/-70 HYB 314171BJL-50/-60/-70 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle tim |
Siemens Semiconductor Group |
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HYB314171BJ-60 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJ-50/-60/-70 HYB 314171BJL-50/-60/-70 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle tim |
Siemens Semiconductor Group |
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HYB314171BJ-70 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJ-50/-60/-70 HYB 314171BJL-50/-60/-70 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle tim |
Siemens Semiconductor Group |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |