Datasheet 3DG13007 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	3DG13007	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 2.0(Max) @ IC= 5.0A ·Switching Time : tf= 0.9μs(Max.)@ IC= 5.0A APPLICATIONS ·Designed for use in high-voltage, high-	Inchange Semiconductor

3DG13 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
3DG130	NPN Silicon High Frequency Middle Power Transistor Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG130 NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy inst	Shaanxi Qunli
3DG13007	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 2.0(Max) @ IC= 5.0A ·Switching Time : tf= 0.9μs(Max.)@ IC= 5.0A APPLICATIONS ·Designed for use in	Inchange Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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