No | Part number | Description ( Function ) | Manufacturers | |
1 | 3DD7G | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7G DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S |
Inchange Semiconductor |
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Recommended search results related to 3DD7G |
Part No | Description ( Function) | Manufacturers | |
3DD741A8 | Silicon NPN Transistor 产品概述 3DD741 A8 是硅 NPN 型功率开关晶体管,该产品 采用平面工艺,分压环终端 结构和少子寿命控制技术, 提高了产品的击穿电压、开 关速度和可靠性。 硅三重扩散 NPN 双极型晶体管 3DD741 A8 ○R 产品特点 � |
Huajing Microelectronics |
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3DD742A8 | Silicon NPN Transistor 产品概述 3DD742 A8 是硅 NPN 型功率开关晶体管,该产品 采用平面工艺,分压环终端 结构和少子寿命控制技术, 提高了产品的击穿电压、开 关速度和可靠性。 硅三重扩散 NPN 双极型晶体管 3DD742 A8 ○R 产品特点 � |
Huajing Microelectronics |
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3DD7A | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier, |
Inchange Semiconductor |
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3DD7B | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier, |
Inchange Semiconductor |
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3DD7C | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier, |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |