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3DD7F PDF Datasheet

The 3DD7F is SilICon NPN Power Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 3DD7F
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S

Inchange Semiconductor
Inchange Semiconductor
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Recommended search results related to 3DD7F

Part No Description ( Function) Manufacturers PDF
3DD741A8   Silicon NPN Transistor

产品概述 3DD741 A8 是硅 NPN 型功率开关晶体管,该产品 采用平面工艺,分压环终端 结构和少子寿命控制技术, 提高了产品的击穿电压、开 关速度和可靠性。 硅三重扩散 NPN 双极型晶体管 3DD741 A8 ○R 产品特点 �

Huajing Microelectronics
Huajing Microelectronics
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3DD742A8   Silicon NPN Transistor

产品概述 3DD742 A8 是硅 NPN 型功率开关晶体管,该产品 采用平面工艺,分压环终端 结构和少子寿命控制技术, 提高了产品的击穿电压、开 关速度和可靠性。 硅三重扩散 NPN 双极型晶体管 3DD742 A8 ○R 产品特点 �

Huajing Microelectronics
Huajing Microelectronics
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3DD7A   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier,

Inchange Semiconductor
Inchange Semiconductor
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3DD7B   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier,

Inchange Semiconductor
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3DD7C   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier,

Inchange Semiconductor
Inchange Semiconductor
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[1]    

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This is a popular adjustable voltage regulator.
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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