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Datasheet 3DD207 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 3DD207 | Silicon NPN Power Transistors
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD207
DESCRIPTION ¡¤ With TO-3 package ¡¤ Low collector saturation voltage APPLICATIONS ¡¤ For audio amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified |
 Inchange Semiconductor |
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| 2 | 3DD2073 | NPN Transistor 3DD2073 型 NPN 硅低频大功率晶体管
参数符号
测试条件
PCM ICM 极 限 Tjm 值 Tstg
Rth
V(BR)CBO V(BR)CEO V(BR)EBO 直 流 ICBO 参 IEBO 数 VBEsat
VCEsat
hFE
Tc=25℃
VCE=10V IC=0.8A ICB=1mA ICE=1mA IEB=1mA
VCB=120V VEB=5V Ic=0.5A IB=0.05A VCB=10V Ic=0.5A
规范值
25 1.5 175 -5 |
 ETC |
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| 1 | 3DD207I | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD207i
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 3A
APPLICATIONS ·Designed for auto amplifier application.
ABSOLU |
Inchange Semiconductor |
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