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3DD13002RUD PDF Datasheet

The 3DD13002RUD is SilICon NPN Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 3DD13002RUD
Silicon NPN Transistor

硅三重扩散 NPN 双极型晶体管 3DD13002 RUD ○R 产品概述 3DD13003 RUD 是 硅 NPN 型功率开关晶体管,该 产品采用平面工艺,分压环 终端结构和少子寿命控制技 术,集成了有源抗饱和网络, 提高了产品的击穿电压、开 关速度和可靠性。 产品特点 ● 开关损耗低 ● 反向漏电流小 ● 高温特性�

Huajing Microelectronics
Huajing Microelectronics
pdf

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Recommended search results related to 3DD13002RUD

Part No Description ( Function) Manufacturers PDF
3DD13002   NPN Transistors

SMD Type NPN Transistors 3DD13002 Transistors ■ Features ● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=400V ● Power Switching Applications 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Param

Kexin
Kexin
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3DD13002   Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13002 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-251 w.datasheet39.comom 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60

TRANSYS Electronics
TRANSYS Electronics
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3DD13002   TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B FEATURE Power dissipation PCM: Collector current ICM: 900 TRANSISTOR (NPN) TO-92 1. EMITTER mW (Tamb=25℃) 2. COLLECTOR 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Co

Jiangsu Changjiang
Jiangsu Changjiang
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3DD13002B   Switch Mode NPN Transistors

3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation T A =25 C Junctio

Weitron Technology
Weitron Technology
datasheet pdf
3DD13002B   TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B FEATURE Power dissipation PCM: Collector current ICM: 900 TRANSISTOR (NPN) TO-92 1. EMITTER mW (Tamb=25℃) 2. COLLECTOR 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Co

Jiangsu Changjiang
Jiangsu Changjiang
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