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Datasheet 3DD13002B Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
13DD13002BSwitch Mode NPN Transistors

3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation T A =25 C Junction Temperature Storag
Weitron Technology
Weitron Technology		transistor
23DD13002BTRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B FEATURE Power dissipation PCM: Collector current ICM: 900 TRANSISTOR (NPN) TO-92 1. EMITTER mW (Tamb=25℃) 2. COLLECTOR 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage
Jiangsu Changjiang
Jiangsu Changjiang		transistor
33DD13002B1Silicon NPN Transistor

硅三重扩散 NPN 双极型晶体管 3DD13002 B1 ○R 产品概述 3DD13002 B1 是硅 NPN 型功率开关晶体管，该产品 采用平面工艺，分压环终端 结构和少子寿命控制技术， 提高了产品的击穿电压、开 关速度和可靠性。 产品特点 ● 开关损耗低
Huajing Microelectronics
Huajing Microelectronics		transistor
43DD13002B1-7Silicon NPN Transistor

硅三重扩散 NPN 双极型晶体管 3DD13002 B1-7 ○R 产品概述 3DD13002 B1-7 是硅 NPN 型功率开关晶体管，该 产品采用平面工艺，分压环 终端结构和少子寿命控制 技术，提高了产品的击穿电 压、开关速度和可靠性。 产品特点 ● 开关损�
Huajing Microelectronics
Huajing Microelectronics		transistor


3DD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
13DD10NPN Silicon Low Frequency High Power Transistor

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th
Shaanxi Qunli Electric
Shaanxi Qunli Electric		transistor
23DD100NPN Silicon Low Frequency High Power Transistor

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.
Shaanxi Qunli Electric
Shaanxi Qunli Electric		transistor
33DD101NPN Silicon Low Frequency High Power Transistor

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.
Shaanxi Qunli Electric
Shaanxi Qunli Electric		transistor
43DD101(3DD101 / 3DD102) NPN

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com
ETC
ETC		data
53DD101ASilicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD101A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS ·Desi
Inchange Semiconductor
Inchange Semiconductor		transistor
63DD101ADiscrete semiconductor devices power transistor

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com
SJ
SJ		transistor
73DD101A(3DD101 / 3DD102) NPN

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com
ETC
ETC		data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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