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Datasheet 3DD102 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | 3DD102 | NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD100, 3DD101, 3DD102
NPN Silicon Low Frequency High Power Transistor
Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability. |
 Shaanxi Qunli Electric |
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| 10 | 3DD102 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification 3DD102
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS ·Desig |
 Inchange Semiconductor |
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| 9 | 3DD102 | (3DD101 / 3DD102) NPN Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
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 ETC |
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| 8 | 3DD102A | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD102A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS ·Desi |
Inchange Semiconductor |
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