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Datasheet 3DD101A Equivalent ( PDF ) |
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| 3 | 3DD101A | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD101A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS ·Desi |
 Inchange Semiconductor |
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| 2 | 3DD101A | (3DD101A - 3DD101E) Discrete semiconductor devices power transistor Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
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| 1 | 3DD101A | (3DD101 / 3DD102) NPN Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
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