Datasheet 3DA89 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	3DA89	NPN Transistor 3DA89 1 3DA89 NPN VHF 2 2.1 2.2 3.3 26min H2a Tamb= 25 CL - VCE0 30 40 - VCB0 50 65 - VEB0 4 IC 0.75 (Tc=25) Ptot 10.7 Tj 150 Tstg -55 +150 V V V A W Tamb= 25 0.2 3.3 3 10 19.5max 10 max M5 2.5 C EE B 1.8 26min - ICB0 VCB=30V IE=0 1.0 mA - IEB0 VEB=3V IC=0 1.0 mA hFE C 15	Huajing Microelectronics

3D Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
3DD13009	NPN Transistor 3DD13009(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR Features 3 2 1 power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter	LGE
3DD2499	Low-frequency amplification case - rated bipolar transistors »ª¾§·ÖÁ¢Æ÷¼þ 3DD2499 µÍÆ ·Å´ó¹Ü¿Ç¶î ¨Ë«¼ ÐÍ¾§Ìå¹Ü 1 ãµØÌëÓöÊÅ¸ 3DD2499 ¹è ¹ ÂÏçÈãµØÌäÆ ß¸¹Ñçµ©´÷» ì¿È¶ÙËØ¹ª¿ Íµ ½¹ÑÍº¥± ÃºÔÐØÌ÷Áçµ ½ÊÎÐ°×â· ¡Ð÷Áç	ETC
3DU5C	Metal Encapsulated Silicon Phototransistor 3DU5C Metal Encapsulated Silicon Phototransistor Dimension Specification  NPN Silicon Phototransistor;Model : 3DU5C  Working Voltage(Max.) : 10V;  Reverse Breakdown Voltage : 15V;  Dark Current : 0.3uA  Photocurrent : 0.5-1mA;  Power Consumption : 30mW;  Peak	ETC

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Número de pieza	Descripción	Fabricantes	PDF
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