No | Part number | Description ( Function ) | Manufacturers | |
2 | 3DA752 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DA752 DESCRIPTION ·Low VCE(sat) ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector |
Inchange Semiconductor |
|
1 | 3DA752 | TO-251 Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DA752 TRANSISTOR (NPN) TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER aSheet Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Ta |
TRANSYS Electronics Limited |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |