pdf datasheet site - dataSheet39.com

3CG562M PDF Datasheet

The 3CG562M is SilICon PNP Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 3CG562M
SILICON PNP TRANSISTOR

2SA562M(3CG562M) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于音频小功率放大,激励级放大及开关电路。 Purpose: Audio frequency low power amplifier, driver stage amplifier, switching applications. 特点:极好的 hFE 特性,与 2SC1959M(3DG1959M)互补。 Features: Excellent hFE linearity, complementary pair with 2SC1959M(3DG1959M). 极限

LZG
LZG
pdf

0    1    2    3    4    5    6    7    8   9  

  A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q    R    S   

 T    U    V    W    X    Y    Z    ALL


Recommended search results related to 3CG562M

Part No Description ( Function) Manufacturers PDF
3CG562   SILICON PNP TRANSISTOR

2SB562(3CG562) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于低频功率放大。 Purpose: Low frequency power amplifier. 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO -25 V VCEO -20 V VEBO -5.0

LZG
LZG
datasheet pdf
2SK3562   Field Effect Transistor Silicon N Channel MOS Type

DataSheet.in 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current:

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SK3562   Field Effect Transistor Silicon N Channel MOS Type

DataSheet.in 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current:

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
3CG561   SILICON PNP TRANSISTOR

2SB561(3CG561) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于低频功率放大。 Purpose: Low frequency power amplifier. 特征:与 2SD467(3DG467)互补。 Features: Complementary pair with 2SD467(3DG467). 极限参数/Absolute Maximum Ratings(Ta=25℃) �

LZG
LZG
datasheet pdf
AAT3562   NanoPower Voltage Detector

AAT3560/2/4 NanoPower Voltage Detector General Description The AAT3560 Series of PowerManager™ products is a member of AATI's Total Power Management IC™ (TPMIC™) product family. These voltage detectors are ideal for monitoring voltage supplies in portable systems, where ext

Advanced Analogic Technologies
Advanced Analogic Technologies
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


Share Link


DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
Our site offers extensive datasheets for various electronic components including semiconductors, resistors, capacitors, connectors and more.


Sitemap Link

Index :     1N    2SC    74H    AD    BC    IRF    

  LM    TD    New    Sitemap    3CG



DataSheet39.com     |   2020    |

  Privacy Policy   |   Contact Us