No | Part number | Description ( Function ) | Manufacturers | |
1 | 35SCGQ060 | Schottky Rectifier ( Diode ) PD -94275B SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35SCGQ060 35 Amp, 60V Major Ratings and Characteristics Characteristics IF(AV) VRRM (Per Leg) IFSM @ tp = 8.3ms half-sine (Per Leg) VF @ 17.5Apk, TJ =125°C (Per Leg) 35SCGQ060 Units 35 60 400 0.61 A V A V °C Description/Features The 35SCGQ060 center tap Schottky rectifier has been expressly designed to meet the rigorous |
International Rectifier |
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Recommended search results related to 35SCGQ060 |
Part No | Description ( Function) | Manufacturers | |
35SCGQ030 | Schottky Rectifier ( Diode ) PD -94229 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35SCGQ030 35 Amp, 30V Major Ratings and Characteristics Characteristics IF(AV) VRRM (Per Leg) IFSM @ tp = 8.3ms half-sine (Per Leg) VF @ 17.5Apk, T J =125°C (Per Leg) 35SCGQ030 Units 35 30 150 A V A Description/Features The |
International Rectifier |
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35SCGQ045 | Schottky Rectifier ( Diode ) PD -93965 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35SCGQ045 35 Amp, 45V Major Ratings and Characteristics Characteristics IF(AV) VRRM (Per Leg) IFSM @ tp = 8.3ms half-sine (Per Leg) VF @ 30Apk, TJ =125°C (Per Leg) Description/Features The 35SCGQ045 cent |
International Rectifier |
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CGH35060F1 | GaN HEMT CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes |
Cree |
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CGH35060P1 | GaN HEMT CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes |
Cree |
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CGHV35060MP | GaN HEMT PRELIMINARY CGHV35060MP 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for |
Cree |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |