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35SCGQ060 PDF Datasheet

The 35SCGQ060 is Schottky Rectifier ( Diode ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 35SCGQ060
Schottky Rectifier ( Diode )

PD -94275B SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35SCGQ060 35 Amp, 60V Major Ratings and Characteristics Characteristics IF(AV) VRRM (Per Leg) IFSM @ tp = 8.3ms half-sine (Per Leg) VF @ 17.5Apk, TJ =125°C (Per Leg) 35SCGQ060 Units 35 60 400 0.61 A V A V °C Description/Features The 35SCGQ060 center tap Schottky rectifier has been expressly designed to meet the rigorous

International Rectifier
International Rectifier
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Recommended search results related to 35SCGQ060

Part No Description ( Function) Manufacturers PDF
35SCGQ030   Schottky Rectifier ( Diode )

PD -94229 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35SCGQ030 35 Amp, 30V Major Ratings and Characteristics Characteristics IF(AV) VRRM (Per Leg) IFSM @ tp = 8.3ms half-sine (Per Leg) VF @ 17.5Apk, T J =125°C (Per Leg) 35SCGQ030 Units 35 30 150 A V A Description/Features The

International Rectifier
International Rectifier
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35SCGQ045   Schottky Rectifier ( Diode )

PD -93965 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35SCGQ045 35 Amp, 45V Major Ratings and Characteristics Characteristics IF(AV) VRRM (Per Leg) IFSM @ tp = 8.3ms half-sine (Per Leg) VF @ 30Apk, TJ =125°C (Per Leg) Description/Features The 35SCGQ045 cent

International Rectifier
International Rectifier
datasheet pdf
CGH35060F1   GaN HEMT

CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes

Cree
Cree
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CGH35060P1   GaN HEMT

CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes

Cree
Cree
datasheet pdf
CGHV35060MP   GaN HEMT

PRELIMINARY CGHV35060MP 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for

Cree
Cree
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[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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