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3446-XXXX PDF Datasheet

The 3446-XXXX is Latch / Ejector Header. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 3446-XXXX
Latch / Ejector Header

w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c

3M Interconnect Solutions
3M Interconnect Solutions
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Recommended search results related to 3446-XXXX

Part No Description ( Function) Manufacturers PDF
2N3446   Bipolar NPN Device

2N3446 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29

Seme LAB
Seme LAB
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2N3446   Silicon NPN Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Coll

SavantIC
SavantIC
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2SC3446   NPN Triple Diffused Planar Silicon Transistor

Ordering number:EN1544B NPN Triple Diffused Planar Silicon Transistor 2SC3446 500V/3A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensio

Sanyo Semicon Device
Sanyo Semicon Device
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2SC3446   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3446 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and gene

Inchange Semiconductor
Inchange Semiconductor
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2SK3446   Silicon N Channel Power MOS FET Power Switching

2SK3446 Silicon N Channel Power MOS FET Power Switching Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) 321 G REJ03G1100-0800 (Previ

Renesas Technology
Renesas Technology
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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