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Datasheet 33N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 33N10 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
33N10
·FEATURES ·Drain Current ID= 33A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.06Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,conve |
 Inchange Semiconductor |
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| 1 | 33N10 | FQP33N10 FQP33N10
April 2000
QFET
FQP33N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resis |
 Fairchild Semiconductor |
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