No | Part number | Description ( Function ) | Manufacturers | |
1 | 325S01 | NONLINEAR MODEL NONLINEAR MODEL SCHEMATIC NE325S01 CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 6 ohms 0.69nH Lsx 0.07nH Rsx 0.06 ohms Q1 0.6nH Rdx 6 ohms CGS_PKG 0.07pF CDS_PKG 0.05PF SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -0.8 0 8 0.103 0.092 0.08 2 1 0.715 3e-13 1.22 0 |
NEC |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 325S01 |
Part No | Description ( Function) | Manufacturers | |
NE325S01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF (dB) NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA • GATE LENGTH: ≤ 0.20 µm • GATE WI |
NEC |
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NE325S01-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF (dB) NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA • GATE LENGTH: ≤ 0.20 µm • GATE WI |
NEC |
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NE325S01-T1B | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF (dB) NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA • GATE LENGTH: ≤ 0.20 µm • GATE WI |
NEC |
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5962-9232501MXA | 3A/ 55V H-Bridge LMD18200 3A, 55V H-Bridge December 1999 LMD18200 3A, 55V H-Bridge General Description The LMD18200 is a 3A H-Bridge designed for motion control applications. The device is built using a multi-technology process which combines bipolar and CMOS control circuitry with DMOS power d |
National Semiconductor |
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5962-9232501VXA | 3A/ 55V H-Bridge LMD18200 3A, 55V H-Bridge December 1999 LMD18200 3A, 55V H-Bridge General Description The LMD18200 is a 3A H-Bridge designed for motion control applications. The device is built using a multi-technology process which combines bipolar and CMOS control circuitry with DMOS power d |
National Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |