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3142 PDF Datasheet

The 3142 is Sensitive Hall-effect Switches. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 3142
SENSITIVE HALL-EFFECT SWITCHES

A3141, A3142, A3143, and A3144 Sensitive Hall Effect Switches for High-Temperature Operation Discontinued Product These parts are no longer in production The device should not be purchased for new design applications. Samples are no longer available. Date of status change: October 31, 2005 Recommended Substitutions: For new customers and applications: • for the A3141, refer t

Allegro MicroSystems
Allegro MicroSystems
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Recommended search results related to 3142

Part No Description ( Function) Manufacturers PDF
1N3142   Silicon Power Rectifier

Microsemi Corporation
Microsemi Corporation
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2SC3142   NPN Epitaxial Planar Silicon Transistor

Ordering number:EN1066A NPN Epitaxial Planar Silicon Transistor 2SC3142 High-Frequency General-Purpose Amplifier Applications Features · FBET series. · Compact package enabling compactness of sets. · High fT and small cre (fT=750MHz typ, cre=0.6 typ). Package Dimensions uni

Sanyo Semicon Device
Sanyo Semicon Device
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2SC3142   Silicon NPN transistor

2SC3142 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 高频率。 High fT. 用途 / Applications 用于普通高频放大。 High frequency general-purp

BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
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2SC3142   NPN Transistors

SMD Type Transistors NPN Transistors 2SC3142 ■ Features ● Collector Current Capability IC=30mA ● Collector Emitter Voltage VCEO=20V +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.

Kexin
Kexin
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2SK3142   Silicon N Channel MOS FET High Speed Power Switching

2SK3142 Silicon N Channel MOS FET High Speed Power Switching ADE-208-681A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM D G 1 2 3 1. Gate

Hitachi Semiconductor
Hitachi Semiconductor
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[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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