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30N60C3 PDF Datasheet

The 30N60C3 is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 30N60C3
IGBT ( Insulated Gate Bipolar Transistor )

GenX3TM 600V IGBTs High-Speed PT IGBTs for 40-100kHz Switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC

IXYS
IXYS
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Recommended search results related to 30N60C3

Part No Description ( Function) Manufacturers PDF
G30N60C3D   HGTG30N60C3D

HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The

Intersil Corporation
Intersil Corporation
datasheet pdf
HGTG30N60C3   63A/ 600V/ UFS Series N-Channel IGBT

HGTG30N60C3 Data Sheet January 2000 File Number 4042.2 63A, 600V, UFS Series N-Channel IGBT The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the lo

Intersil Corporation
Intersil Corporation
datasheet pdf
HGTG30N60C3D   63A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high

Intersil Corporation
Intersil Corporation
datasheet pdf
HGTG30N60C3D   63A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
IXGA30N60C3   GenX3 600V IGBT

GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = TO-263 (IXGA) 600V 30A 3.0V 47ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions

IXYS Corporation
IXYS Corporation
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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