No | Part number | Description ( Function ) | Manufacturers | |
1 | 30N60C3 | IGBT ( Insulated Gate Bipolar Transistor ) GenX3TM 600V IGBTs High-Speed PT IGBTs for 40-100kHz Switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC |
IXYS |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 30N60C3 |
Part No | Description ( Function) | Manufacturers | |
G30N60C3D | HGTG30N60C3D HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The |
Intersil Corporation |
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HGTG30N60C3 | 63A/ 600V/ UFS Series N-Channel IGBT HGTG30N60C3 Data Sheet January 2000 File Number 4042.2 63A, 600V, UFS Series N-Channel IGBT The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the lo |
Intersil Corporation |
|
HGTG30N60C3D | 63A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high |
Intersil Corporation |
|
HGTG30N60C3D | 63A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of |
Fairchild Semiconductor |
|
IXGA30N60C3 | GenX3 600V IGBT GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = TO-263 (IXGA) 600V 30A 3.0V 47ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions |
IXYS Corporation |
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