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Datasheet 30N50Q Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 30N50Q   Power MOSFETs

HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q (Electrically Isolated Back Surface) IXFR 32N50Q N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W Preliminary data Symbol VDSS VDGR VGS VGSM ID25 I DM I AR
IXYS
IXYS		 datasheet 30N50Q pdf

30N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
30N60A4D

HGT1N30N60A4D

HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedanc
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
30N06

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N06 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching p
 Inchange Semiconductor
Inchange Semiconductor		 datasheet pdf - Inchange Semiconductor
30N45

N-Channel Enhancement Mode MFET

Preliminary Data Sheet MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH 30N45 450 V IXTH 30N50 500 V ID25 RDS(on) 30 A 0.16 Ω 30 A 0.17 Ω TO-247 AD Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions
IXYS
IXYS		 datasheet pdf - IXYS


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Número de pieza Descripción Fabricantes PDF
SPS122

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 Sanken
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