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Datasheet 30N06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 30N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
30N06
·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.05Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,conver |
 Inchange Semiconductor |
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| 5 | 30N06 | N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 30N06
30 Amps, 60 Volts N-CHANNEL POWER MOSFET
1
MOSFET
DESCRIPTION
The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanch |
 Unisonic Technologies |
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| 4 | 30N06-Q | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
30N06-Q
Power MOSFET
60V, 30A N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche character |
Unisonic Technologies |
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| 3 | 30N06G | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 30N06
60V, 30A N-CHANNEL POWER MOSFET
DESCRIPTION
1 TO-220F1 1 TO-220F2 1 TO-220
Power MOSFET
1 TO-220F
The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resista |
Unisonic Technologies |
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