No | Part number | Description ( Function ) | Manufacturers | |
1 | 3.0KP75A | Transient Voltage Supresor Diode 3KP Series 3KP Transient Voltage Suppressor Diode Series General Information The 3KP series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The 3KP series is supplied in YINT Semiconductor ’ s exclusive,cost-effective,high |
Yint |
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Recommended search results related to 3.0KP75A |
Part No | Description ( Function) | Manufacturers | |
3.0KP75CA | Transient Voltage Supresor Diode 3KP Series 3KP Transient Voltage Suppressor Diode Series General Information The 3KP series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast |
Yint |
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2KG023075JL | SWITCHING DIODE CHIPS 2KG023075JL 2KG023075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG023075JL is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. This chip has several thicknesses, can suit for different plastic package. |
Silan Microelectronics |
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2SC3075 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications Unit: mm · Excellent switching times: tr = 1.0 µs (max) tf = 1.5 µs (max) |
Toshiba Semiconductor |
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2SC3075 | NPN Silicon Epitaxial Transistor SMD Type NPN Silicon Epitaxial Transistor 2SC3075 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Excellent Switching Times +0.2 9.70 -0.2 tr=1.0ìs (Max.) tf=1.5ìs (Max.) at IC=0.5A High colletor Breakdown Vol |
Kexin |
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2SK3075 | Silicon N Channel MOS Type Field Effect Transistor 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |