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Datasheet 2SK415 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SK415 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK415
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Fast Switching Speed
APPLICATIONS ·High voltage,high speed power Switching .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO |
 Inchange Semiconductor |
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| 3 | 2SK415 | HIGH SPEED POWER SWITCHING |
 Hitachi Semiconductor |
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| 2 | 2SK4150 | Silicon N Channel MOS FET High Speed Power Switching Preliminary Datasheet
2SK4150
Silicon N Channel MOS FET High Speed Power Switching
Features
Capable of 2.5 V gate drive Low drive current Low on-resistance RDS(on) = 4.0 typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) REJ03G1909-0300 Rev.3.00 May 27, 2010
Outline
RE |
 Renesas Technology |
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| 1 | 2SK4151 | Silicon N Channel MOS FET High Speed Power Switching
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company n |
Renesas Technology |
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