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Datasheet 2SK2885 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SK2885 | Silicon N Channel MOS FET High Speed Power Switching 2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-545 A 2nd. Edition Features
• Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2885(L), |
 Hitachi Semiconductor |
 |
| 2 | 2SK2885L | Silicon N Channel MOS FET High Speed Power Switching 2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-545 A 2nd. Edition Features
• Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2885(L), |
Hitachi Semiconductor |
|
| 1 | 2SK2885S | Silicon N Channel MOS FET High Speed Power Switching 2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-545 A 2nd. Edition Features
• Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2885(L), |
Hitachi Semiconductor |
|
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