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Datasheet 2SK2018-01 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | 2SK2018-01 | N-channel MOS-FET 2SK2018-01L,S
FAP-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof
N-channel MOS-FET
60V
0,1Ω
10A
20W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converte |
Fuji Electric |
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2 | 2SK2018-01L | N-channel MOS-FET 2SK2018-01L,S
FAP-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof
N-channel MOS-FET
60V
0,1Ω
10A
20W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converte |
Fuji Electric |
|
1 | 2SK2018-01S | N-channel MOS-FET 2SK2018-01L,S
FAP-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof
N-channel MOS-FET
60V
0,1Ω
10A
20W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converte |
Fuji Electric |
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Número de pieza | Descripción | Fabricantes | |
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