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Datasheet 2SK1611 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK1611 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1611
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min)
APPLICATIONS ·Designed for high voltage, high speed power switching
applications such as switching regulators, converte |
 Inchange Semiconductor |
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| 1 | 2SK1611 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs
2SK1611
Silicon N-Channel Power F-MOS FET
s Features
q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic
unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
s Applications
16.7±0.3
7.5±0.2
q High-speed switch |
 Panasonic Semiconductor |
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