No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SK0663 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching 0.3+0.1 –0.0 unit: mm (0.425) 0.15+0.10 –0.05 I Features 3 (0.65) (0.65) 1.3±0.1 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Al |
Panasonic Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SK0663 |
Part No | Description ( Function) | Manufacturers | |
2SK0601 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insert |
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2SK0614 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm I Features 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximu |
Panasonic Semiconductor |
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2SK0615 | SILICON N-CHANNEL MOS FET Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features 2.0±0.2 G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as |
Panasonic Semiconductor |
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2SK0655 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching I Features 0.75 max. 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain cu |
Panasonic Semiconductor |
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2SK0656 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain cur |
Panasonic Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |