Datasheet 2SJ479L Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SJ479L	Silicon P Channel DV-L MOS FET High Speed Power Switching 2SJ479(L), 2SJ479(S) Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-541 1st. Edition Features • Low on-resistance R DS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ	Hitachi Semiconductor

2SJ4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SJ49	LOW FREQUENCY POWER AMPLIFIER This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer	Hitachi Semiconductor
2SJ477-01MR	Power MOSFET ( Transistor )	Fuji Electric
2SJ449	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2	NEC

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Número de pieza	Descripción	Fabricantes	PDF
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