No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SJ196 | P-CHANNEL MOS FET FOR SWITCHING |
NEC |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SJ196 |
Part No | Description ( Function) | Manufacturers | |
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New Jersey Semiconductor |
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2SA2196 | PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Ordering number : ENA0462 2SA2196 / 2SC6101 SANYO Semiconductors DATA SHEET 2SA2196 / 2SC6101 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features � |
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2SD2196 | Darlington Transistor(15A NPN) SHINDENGEN Darlington Transistor 2SD2196 (TP15L20) 15A NPN OUTLINE DIMENSIONS Case : ITO-3P Unit : mm RATINGS ● Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Cur |
Shindengen Electric Mfg.Co.Ltd |
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2SD2196 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2196 DESCRIPTION ·With TO-3PML package ·High DC current gain ·DARLINGTON PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION |
SavantIC |
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2SJ103 | P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) 2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS |
Toshiba Semiconductor |
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Part Number | Function | Manufacturers | |
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Vishay |
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ON Semiconductor |
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