No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SJ179 | P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SJ179 |
Part No | Description ( Function) | Manufacturers | |
2SA2179 | PNP Epitaxial Planar Silicon Transistor Ordering number : ENA0199 2SA2179 2SA2179 Applications • PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications High-speed switching applications (switching regulators, drive circuit). Features • • • • Adoption of |
Sanyo Semicon Device |
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2SD2179 | Silicon NPN epitaxial planer type(For low-frequency output amplification) Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 Low collector to emitte |
Panasonic Semiconductor |
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2SD2179 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 Low collector to emitte |
Panasonic Semiconductor |
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2SJ103 | P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) 2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS |
Toshiba Semiconductor |
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2SJ104 | Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ104 Unit: mm · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = � |
Toshiba Semiconductor |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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