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2SJ175 PDF Datasheet

The 2SJ175 is SilICon P-channel Mos Fet. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2SJ175
Silicon P-Channel MOS FET

2SJ175 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ175 Absol

Hitachi Semiconductor
Hitachi Semiconductor
pdf

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Recommended search results related to 2SJ175

Part No Description ( Function) Manufacturers PDF
2N2175   SMALL SIGNAL TRANSISTORS

Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 7.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 3.0 6.0 7.0 7.0 6.0 6.0 6.0 5.0 6.0 5.0 6.0 6.0 6.0 7.0 7.0 7.0 5.0 5.0 5.0 7.0 5.0 5.0 5.0 5.0 5.0

Central Semiconductor
Central Semiconductor
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2N2175   Trans GP BJT NPN 100V 2A 4-Pin TO-111

New Jersey Semiconductor
New Jersey Semiconductor
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2SJ103   P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS

Toshiba Semiconductor
Toshiba Semiconductor
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2SJ104   Silicon P Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ104 Unit: mm · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = �

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SJ105   Silicon P Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ105 Unit: mm · High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) · L

Toshiba Semiconductor
Toshiba Semiconductor
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[1]    

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Part Number Function Manufacturers PDF
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