No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SJ175 | Silicon P-Channel MOS FET 2SJ175 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ175 Absol |
Hitachi Semiconductor |
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Recommended search results related to 2SJ175 |
Part No | Description ( Function) | Manufacturers | |
2N2175 | SMALL SIGNAL TRANSISTORS Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 7.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 3.0 6.0 7.0 7.0 6.0 6.0 6.0 5.0 6.0 5.0 6.0 6.0 6.0 7.0 7.0 7.0 5.0 5.0 5.0 7.0 5.0 5.0 5.0 5.0 5.0 |
Central Semiconductor |
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2N2175 | Trans GP BJT NPN 100V 2A 4-Pin TO-111 |
New Jersey Semiconductor |
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2SJ103 | P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) 2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS |
Toshiba Semiconductor |
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2SJ104 | Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ104 Unit: mm · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = � |
Toshiba Semiconductor |
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2SJ105 | Silicon P Channel Junction Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ105 Unit: mm · High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) · L |
Toshiba Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |