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Datasheet 2SD2150 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SD2150 | Low Frequency Transistor(20V/ 3A) Transistors
Low Frequency Transistor (20V, 3A)
2SD2150 / 2SC4115S / 2SD2264
FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FStructure Epitaxial planar type NPN silicon transistor FExternal dim |
 ROHM Semiconductor |
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| 4 | 2SD2150 | TRANSISTOR NPN www.DataSheet.co.kr
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
2SD2150
SOT-89
1. BASE 2. COLLECTOR 3. EMITTER 1 2 3
TRANSISTOR NPN
FEATURES Power dissipation : 0.5 W Tamb=25 PCM Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Oper |
 Jiangsu Changjiang Electronics |
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| 3 | 2SD2150 | NPN Epitaxial Planar Transistors www.DataSheet.co.kr
2SD2150
NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temp |
 Weitron Technology |
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| 2 | 2SD2150 | Low Frequency Transistor www.DataSheet.co.kr
SMD Type
Low Frequency Transistor 2SD2150
Transistors
SOT-89
4.50
+0.1 -0.1
Unit: mm 1.50
+0.1 -0.1
+0.1 1.80-0.1
Features
+0.1 2.50-0.1
Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.
+0.1 0.48-0.1
1
2
3
+0.1 0.80-0.1
+0.1 0.53-0.1 +0.1 |
 Guangdong Kexin Industrial |
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