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Datasheet 2SD1899 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
7 | 2SD1899 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1899
DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High transition frequency applications
ABSOLUTE MAXIMUM RATIN |
Inchange Semiconductor |
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6 | 2SD1899 | TO-252 Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-252 Plastic-Encapsulated Transistors
2SD1899-Z
FEATURES Power dissipation PCM: 2 W (Tamb=25℃)
TRANSISTOR (NPN) TO-252
1. BASE
2. COLLECTOR
Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, |
TRANSYS Electronics Limited |
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5 | 2SD1899 | NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
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4 | 2SD1899 | NPN PLASTIC ENCAPSULATE TRANSISTORS 2SD1899
NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
1.BASE 2.COLLECTOR 3.EMITTER 1 2 3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Tempe |
Weitron |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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